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| MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-HBK * * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 4-5.5 18.8 23 23 17.5 1.3 9 C2E1 800.25 9.5 20.5 3-M5 90.1 (12) (12) (12) B1 E1 Tab#110, t=0.5 6 12 480.25 E2 C1 61 30 E2 B2 6 12 LABEL 8 20.5 28 29 +1.5 - 0.5 B2X B1X B2X B2 E2 C1 C2E1 E2 B1X E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 100 100 620 6 1000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=100A, IB=0.13A -IC=100A (diode forward voltage) IC=100A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=100A, IB1=0.2A, -IB2=2.0A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 100 2.5 3.0 1.8 -- 2.5 10 2.0 0.2 0.65 0.1 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj=25C 0mA IB=30 0mA IB=20 30mA IB=1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1 COLLECTOR CURRENT IC (A) 180 160 140 120 100 80 60 40 20 0 0 VCE=5.0V IB=50mA IB=30mA DC CURRENT GAIN hFE VCE=2.5V Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 1.6 2.0 2.4 2.8 3.2 3.6 VCE=2.5V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE(sat) IB=0.13A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 4 ton, ts, tf (s) ts ton 3 2 IC=50A 1 Tj=25C Tj=125C IC=150A IC=100A SWITCHING TIME tf Tj=25C Tj=125C 4 5 7 10 1 VCC=300V IB1=200mA IB2=-2A 2 34 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 2 3 4 5 7 10 2 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 2 3 4 5 7 10 1 ts REVERSE BIAS SAFE OPERATING AREA 200 COLLECTOR CURRENT IC (A) 180 160 140 120 100 80 60 40 20 0 0 Tj=125C 100 200 300 400 500 600 700 800 IB2=-5.0A IB2=-2.0A SWITCHING TIME ts, tf (s) tf Tj=25C Tj=125C VCC=300V IB1=200mA IC=100A 2 3 4 5 7 10 2 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 tw=50s 100s 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) SECOND BREAKDOWN AREA DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION s 0 50 s 1m s m 10 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 0.20 D C VCE (V) CASE TEMPERATURE TC (C) 0.16 Zth (j-c) (C/ W) 0.12 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.08 0.04 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=300V 5 IB1=0.2A 3 2 -IB2=2.0A 10 1 7 5 3 2 Tj=25C 10 0 Tj=125C 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 2 Irr Qrr 10 1 trr (s) trr 10 0 10 -1 2 3 4 5 7 10 3 Feb.1999 800 Irr (A), Qrr (c) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 600 400 200 0 10 0 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 1.0 0.8 Zth (j-c) (C/ W) 0.6 0.4 0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) |
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